FD-SOI enables dramatically improved IC performance at a much lower cost and power consumption than leading-edge CMOS technologies at or below 28 nm process nodes. The success of this new technology depends on the availability of new tools, flows, platforms, methodologies and skills that are required to achieve optimal design quality and productivity.
SITRI is proudly co-organizing this Workshop with CEA-Leti, a leading global center for applied research in microelectronics, nanotechnologies and integrated systems. Topics to be addressed cover the full FD-SOI supply chain: process characteristics and roadmap, design methodologies for digital, mixed signal and RF applications, energy efficient architectures and power management techniques, IP availability and roadmaps.
You are cordially invited to this Workshop on Sept 8th afternoon in Shanghai.
Time: Thursday, September 8th, 2016, 14:00-17:00. Registration starts at 13:45.
Venue: Pudong, Shanghai,
Organizers: CEA-Leti, Shanghai Industrial μTechnology Research Institute (SITRI)
Agenda
| Time | Speech Subject |
| 13:45 – 14:00 | Registration |
| 14:00 – 14:10 | Opening Marie Semeria, CEO, Leti (TBC) |
| 14:10 – 14:30 | Leti & Smart Miniaturized Systems (download available) Thierry Collette, VP, DACLE/Leti |
| 14:30 – 15:00 | FDSOI Technology General Overview (download available) Fabien Clermidy, Director Digital Design, DACLE/Leti |
| 15:30 – 16:00 | FDSOI Technology General Overview & Low-power Design (download available) Fabien Clermidy, Director Digital Design, DACLE/Leti |
| 16:00 – 16:30 | FD-SOI RF Design Techniques (download available) Eric Mercier, Manager RF Design, DACLE/Leti |
| 16:30 – 17:00 | CEA-Leti’s IoT Platform based on FD-SOI, a practical application example – Silicon Impulse and Conclusion Ali Erdengiz, Sr. Manager Business Development, Leti |
| 17:00-17:15 | Wrap-up Stan Sun, Director Design Service, SITRI |